| PART |
Description |
Maker |
| HM628128DI HM628128DLFPI-7 HM628128DLPI-7 |
1 M SRAM (128-kword X 8-bit)
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HN58W241000FPIE HN58W241000I HN58W241000I05 |
Two-wire serial interface 1M EEPROM (128-kword ? 8-bit)
Two-wire serial interface 1M EEPROM (128-kword × 8-bit)
|
Renesas Electronics Corporation
|
| HN58V1001FP-25 HN58V1001P-25 HN58V1001 HN58V1001T- |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
|
HITACHI[Hitachi Semiconductor]
|
| HN58V1001T-25 HN58V1001P-25 |
5015 RR 3#8 SKT RECP
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
|
Hitachi,Ltd.
|
| HN58X2408TIE HN58X2416TIE HN58X2464TIE HN58X2464FP |
Memory>EEPROM>Serial EEPROM
Two-wire serial interface 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit)
Two-wire serial interface 8k EEPROM (1-kword 隆驴 8-bit)/16k EEPROM (2-kword 隆驴 8-bit) 32k EEPROM (4-kword 隆驴 8-bit)/64k EEPROM (8-kword 隆驴 8-bit)
|
http://
Renesas Electronics Corporation
|
| HN58X25128TIE HN58X25128FPIE |
Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory
|
Renesas Electronics Corporation
|
| HN58X24128FPI HN58X24128I HN58X24128TI HN58X24256F |
Two-wire serial interface, 128k EEPROM (16-kword x 8-bit), 256k EEPROM (32-kword x 8-bit)
Two-wire serial interface/ 128k EEPROM (16-kword x 8-bit)/ 256k EEPROM (32-kword x 8-bit)
Serial EEPROMs
|
HITACHI[Hitachi Semiconductor]
|
| HN58X2464SFPIE HN58X2464STIE HN58X2432SFPIE HN58X2 |
Memory>EEPROM>Serial EEPROM
Two-wire serial interface 32k EEPROM (4-kword x 8-bit)/64k EEPROM (8-kword x 8-bit)
Two-wire serial interface 32k EEPROM (4-kword 】 8-bit)/64k EEPROM (8-kword 】 8-bit)
|
RENESAS[Renesas Electronics Corporation]
|
| HN58X2416STIE HN58X2408SFPIE HN58X2408SI HN58X2408 |
Memory>EEPROM>Serial EEPROM
Two-wire serial interface 8k EEPROM (1-kword 】 8-bit) 16k EEPROM (2-kword 】 8-bit)
Two-wire serial interface 8k EEPROM (1-kword × 8-bit) 16k EEPROM (2-kword × 8-bit)
|
Renesas Electronics Corporation
|
| AMD29F010B AM29F010B AMD29F010B-120EC AMD29F010B-1 |
From old datasheet system
1 Mbit (128 K x 8-Bit)
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices]
AMD Inc
|
| HM628511HC HM628511HCJP-10 HM628511HCLJP-10 |
4M High Speed SRAM (512-kword x 8-bit)
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk 4分高速SRAM12 - KWord的8位）
4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位）
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| AM29LV128LH103EI AM29LV128LH103FI AM29LV128LH103PC |
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 100ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 110ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 120ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 90ns
|
Advanced Micro Devices
|
